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TPN2R805PL Datasheet - Toshiba

TPN2R805PL Silicon N-channel MOSFET

TPN2R805PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 12 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID =

TPN2R805PL Datasheet (478.55 KB)

Preview of TPN2R805PL PDF

Datasheet Details

Part number:

TPN2R805PL

Manufacturer:

Toshiba ↗

File Size:

478.55 KB

Description:

Silicon n-channel mosfet.

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TPN2R805PL Silicon N-channel MOSFET Toshiba

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