Part number:
TPN2R503NC
Manufacturer:
File Size:
241.64 KB
Description:
Mosfet.
TPN2R503NC Datasheet (241.64 KB)
* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
TPN2R503NC Datasheet (241.64 KB)
TPN2R503NC
241.64 KB
Mosfet.
📁 Related Datasheet
TPN2R203NC Field Effect Transistor (Toshiba)
TPN2R304PL Silicon N-channel MOSFET (Toshiba)
TPN2R703NL Silicon N-channel MOSFET (Toshiba)
TPN2R805PL Silicon N-channel MOSFET (Toshiba)
TPN2R903PL Silicon N-channel MOSFET (Toshiba)
TPN2010FNH Silicon N-channel MOSFET (Toshiba)
TPN22006NH MOSFET (Toshiba)
TPN11003NL MOSFETs (Toshiba)
TPN11006NL MOSFET (Toshiba)
TPN11006PL Silicon N-channel MOSFET (Toshiba)
