Datasheet Specifications
- Part number
- TPN2R503NC
- Manufacturer
- Toshiba ↗
- File Size
- 241.64 KB
- Datasheet
- TPN2R503NC-Toshiba.pdf
- Description
- MOSFET
Description
TPN2R503NC MOSFETs Silicon N-channel MOS (U-MOS) TPN2R503NC 1.Applications * Power Management Switches 2..
Features
* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: SourceTPN2R503NC Distributors
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