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TPN2R503NC Datasheet - Toshiba

TPN2R503NC MOSFET

TPN2R503NC Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source

TPN2R503NC-Toshiba.pdf

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Datasheet Details

Part number:

TPN2R503NC

Manufacturer:

Toshiba ↗

File Size:

241.64 KB

Description:

Mosfet.

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TPN2R503NC TPN2R503NC MOSFET Toshiba

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