TPN2R203NC Field Effect Transistor

Toshiba

Description

TPN2R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN2R203NC 1.Applications * Power Management Switches 2..

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Datasheet Specifications

Part number: TPN2R203NC
Manufacturer: Toshiba ↗
File Size: 262.06 KB
Datasheet: TPN2R203NC_Toshiba.pdf
Description: Field Effect Transistor

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolut

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TPN2R203NC Field Effect Transistor Toshiba

Toshiba TPN2R203NC-like datasheet