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TPN2R903PL - Silicon N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TPN2R903PL
Manufacturer	Toshiba
File Size	513.72 KB
Description	Silicon N-channel MOSFET
Datasheet	TPN2R903PL-Toshiba.pdf

TPN2R903PL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 5.6 nC (typ. ) (3) Small output charge: Qoss = 17 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN2R903PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial pr.

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Published: Feb 28, 2025 |