Datasheet4U.com

TPN2R304PL - Silicon N-channel MOSFET

Toshiba

📥 Download Datasheet

TPN2R304PL Datasheet Preview — Preview of TPN2R304PL PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TPN2R304PL
Manufacturer	Toshiba
File Size	478.68 KB
Description	Silicon N-channel MOSFET
Datasheet	TPN2R304PL-Toshiba.pdf

TPN2R304PL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 10.8 nC (typ. ) (3) Small output charge: Qoss = 27 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN2R304PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial p.

📁 TPN2R304PL Similar Datasheet

TPN3021 - TRIPOLAR OVERVOLTAGE PROTECTION (STMicroelectronics)
TPNA0505S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0509S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0512S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0515S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1205S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1209S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1212S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)

Other Datasheets by Toshiba

TPN2R203NC - Field Effect Transistor
TPN2R503NC - MOSFET
TPN2R703NL - Silicon N-channel MOSFET
TPN2R805PL - Silicon N-channel MOSFET
TPN2R903PL - Silicon N-channel MOSFET
TPN2010FNH - Silicon N-channel MOSFET

Published: Sep 11, 2019 |