* (1) High-speed switching (2) Small gate charge: QSW = 10.8 nC (typ.) (3) Small output charge: Qoss = 27 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID
TPN2R304PL Datasheet (478.68 KB)
TPN2R304PL
478.68 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN2R304PL
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulators .
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