Datasheet Specifications
- Part number
- TPN22006NH
- Manufacturer
- Toshiba ↗
- File Size
- 225.04 KB
- Datasheet
- TPN22006NH-Toshiba.pdf
- Description
- MOSFET
Description
TPN22006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN22006NH 1.Applications * * * Switching Voltage Regulators Motor Drive.
Features
* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mTPN22006NH Distributors
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