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TPN22006NH Datasheet - Toshiba

TPN22006NH MOSFET

TPN22006NH Features

* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 m

TPN22006NH-Toshiba.pdf

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Datasheet Details

Part number:

TPN22006NH

Manufacturer:

Toshiba ↗

File Size:

225.04 KB

Description:

Mosfet.

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