Datasheet4U.com

TPN22006NH - MOSFET

Toshiba

📥 Download Datasheet

TPN22006NH Datasheet Preview — Preview of TPN22006NH PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TPN22006NH
Manufacturer	Toshiba
File Size	225.04 KB
Description	MOSFET
Datasheet	TPN22006NH-Toshiba.pdf

TPN22006NH Product details

Features

(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 1 2012-08 2014-01-07 Rev.2.0 TPN22006NH 4. Absolute Maximum Ratings (N.

📁 TPN22006NH Similar Datasheet

TPN3021 - TRIPOLAR OVERVOLTAGE PROTECTION (STMicroelectronics)
TPNA0505S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0509S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0512S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0515S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1205S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1209S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1212S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)

Other Datasheets by Toshiba

TPN2010FNH - Silicon N-channel MOSFET
TPN2R203NC - Field Effect Transistor
TPN2R304PL - Silicon N-channel MOSFET
TPN2R503NC - MOSFET
TPN2R703NL - Silicon N-channel MOSFET
TPN2R805PL - Silicon N-channel MOSFET

Published: Aug 29, 2014 |