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TPN30008NH Datasheet - Toshiba

TPN30008NH MOSFETs

TPN30008NH Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.1 nC (typ.) Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packagin

TPN30008NH-Toshiba.pdf

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Datasheet Details

Part number:

TPN30008NH

Manufacturer:

Toshiba ↗

File Size:

228.75 KB

Description:

Mosfets.

TPN30008NH Distributor

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TPN30008NH TPN30008NH MOSFETs Toshiba