* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.1 nC (typ.) Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packagin
TPN30008NH Datasheet (228.75 KB)
TPN30008NH
228.75 KB
Mosfets.
TPN30008NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN30008NH 1. Applications DC-DC Converters Switching Voltage Regul.
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