Datasheet4U Logo Datasheet4U.com

TPN3300ANH Datasheet - Toshiba

MOSFETs

TPN3300ANH Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi

TPN3300ANH Datasheet (234.05 KB)

Preview of TPN3300ANH PDF

Datasheet Details

Part number:

TPN3300ANH

Manufacturer:

Toshiba ↗

File Size:

234.05 KB

Description:

Mosfets.
TPN3300ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN3300ANH 1. Applications DC-DC Converters Switching Voltage Regul.

📁 Related Datasheet

TPN30008NH MOSFETs (Toshiba)

TPN3021 TRIPOLAR OVERVOLTAGE PROTECTION (STMicroelectronics)

TPN3R704PL Silicon N-channel MOSFET (Toshiba)

TPN11003NL MOSFETs (Toshiba)

TPN11006NL MOSFET (Toshiba)

TPN11006PL Silicon N-channel MOSFET (Toshiba)

TPN1110ENH Silicon N-channel MOSFET (Toshiba)

TPN12008QM Silicon N-Channel MOSFET (Toshiba)

TPN1200APL Silicon N-channel MOSFET (Toshiba)

TPN13008NH MOSFETs (Toshiba)

TAGS

TPN3300ANH MOSFETs Toshiba

Image Gallery

TPN3300ANH Datasheet Preview Page 2 TPN3300ANH Datasheet Preview Page 3

TPN3300ANH Distributor