TPN3300ANH MOSFETs

Toshiba

Description

TPN3300ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN3300ANH 1.Applications * * * DC-DC Converters Switching Voltage Regul.

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Datasheet Specifications

Part number: TPN3300ANH
Manufacturer: Toshiba ↗
File Size: 234.05 KB
Datasheet: TPN3300ANH-Toshiba.pdf
Description: MOSFETs

Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi

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TPN3300ANH MOSFETs Toshiba

Toshiba TPN3300ANH-like datasheet