Datasheet Details
- Part number
- TPN5900CNH
- Manufacturer
- Toshiba ↗
- File Size
- 229.20 KB
- Datasheet
- TPN5900CNH-Toshiba.pdf
- Description
- Silicon N-channel MOSFET
TPN5900CNH Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN5900CNH 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators .TPN5900CNH Features
* (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal CircuitTPN5900CNH Applications
* High-Efficiency DC-DC Converters📁 Related Datasheet
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