TPN7R504PL - Silicon N-channel MOSFET
TPN7R504PL Features
* (1) High-speed switching (2) Small gate charge: QSW = 6.0 nC (typ.) (3) Small output charge: Qoss = 16 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID
