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TPN7R506NH

MOSFET

TPN7R506NH Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPN7R506NH Datasheet (236.08 KB)

Preview of TPN7R506NH PDF

Datasheet Details

Part number:

TPN7R506NH

Manufacturer:

Toshiba ↗

File Size:

236.08 KB

Description:

Mosfet.
TPN7R506NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN7R506NH 1. Applications

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* DC-DC Converters Switching Voltage Regul.

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TPN7R506NH MOSFET Toshiba

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