Datasheet Specifications
- Part number
- TPN7R506NH
- Manufacturer
- Toshiba ↗
- File Size
- 236.08 KB
- Datasheet
- TPN7R506NH-Toshiba.pdf
- Description
- MOSFET
Description
TPN7R506NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN7R506NH 1.Applications * * * DC-DC Converters Switching Voltage Regul.
Features
* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 9.2 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal CircuitTPN7R506NH Distributors
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