Datasheet4U Logo Datasheet4U.com

TPN7R506NH MOSFET

TPN7R506NH Description

TPN7R506NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPN7R506NH 1.Applications * * * DC-DC Converters Switching Voltage Regul.

TPN7R506NH Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 9.2 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

📥 Download Datasheet

Preview of TPN7R506NH PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TPN3021 - TRIPOLAR OVERVOLTAGE PROTECTION (STMicroelectronics)
  • TPNA0505S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA0509S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA0512S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA0515S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1205S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1209S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
  • TPNA1212S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)

📌 All Tags

MOSFET Toshiba
Toshiba TPN7R506NH-like datasheet