TPN7R506NH - MOSFET

Name: TPN7R506NH
SKU: TPN7R506NH-835950

Toshiba

The TPN7R506NH by Toshiba is a MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TPN7R506NH
Manufacturer	Toshiba
File Size	236.08 KB
Description	MOSFET
Datasheet	TPN7R506NH-Toshiba.pdf
Additional preview pages of the TPN7R506NH datasheet.

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 9.2 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain curren.

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Published: Aug 29, 2014 |