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1SS315 - Silicon Epitaxial Planar Type Diode

1SS315 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Chara.

1SS315 Applications

* 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 V 30 mA 125 °C
* 55 to 125 °C Note: Using continuously under heavy loads (e. g

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Silicon Epitaxial Planar Type Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS315-like datasheet

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