Datasheet4U Logo Datasheet4U.com

K2599 2SK2599

K2599 Description

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) www.DataSheet4U.com 2SK2599 Unit: mm : RDS (ON) = 2.9 Ω (typ.) : .

K2599 Applications

* z Low drain
* source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain
* source voltage Drain
* gate vo

📥 Download Datasheet

Preview of K2599 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • K2590 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • K2500EH70 - High Energy Bidirectional SIDACs (Littelfuse)
  • K2500GH - High Energy Bidirectional SIDACs (Littelfuse)
  • K2500GHU - High Energy Unidirectional SIDACs (Littelfuse)
  • K2500SH - High Energy Bidirectional SIDACs (Littelfuse)
  • K2500SHU - High Energy Unidirectional SIDACs (Littelfuse)
  • K2501G - Multipulse SIDACs (Littelfuse)
  • K2501GL - Standard Bidirectional SIDAC (Littelfuse)

📌 All Tags

2SK2599 Toshiba Semiconductor
Toshiba Semiconductor K2599-like datasheet