Datasheet4U Logo Datasheet4U.com

K3567 Silicon N-Channel MOSFET

K3567 Description

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications * * * <.

K3567 Applications

* Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ. ) High forward transfer admittance: |Yfs| = 2.5S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www. DataSheet4U. com Absolute Maxi

📥 Download Datasheet

Preview of K3567 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • K3562M - IF Filter (EPCOS)
  • K3566 - Silicon N-Channel MOSFET (Toshiba)
  • K350 - Silicon N-Channel MOSFET (Hitachi)
  • K3500G - Clock Oscillator (MTRONPTI)
  • K3502-01MR - 2SK3502-01MR (Fuji Electric)
  • K3503FC450 - Medium Voltage Thyristor (IXYS)
  • K3503FC460 - Medium Voltage Thyristor (IXYS)
  • K3503FC480 - Medium Voltage Thyristor (IXYS)

📌 All Tags

Silicon N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor K3567-like datasheet