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TC55NEM216AFTN55 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55NEM216AFTN55 Description

TC55NEM216AFTN55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC .
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.

TC55NEM216AFTN55 Features

* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide oper

TC55NEM216AFTN55 Applications

* where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of
* 40° to 85°C, the TC55NEM216AFTN can be used in environments exhibiting extreme temperature conditions. The TC55NEM216AFTN is available in a plastic 54-pin thin-small-ou

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TC55NEM216AFTN55 TC55NEM216AFTN77 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor
Toshiba Semiconductor TC55NEM216AFTN55-like datasheet