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TK50J30D - Silicon N-Channel MOSFET

TK50J30D Description

MOSFETs Silicon N-Channel MOS (π-MOS) TK50J30D 1.Applications * Switching Voltage Regulators 2..

TK50J30D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK50J30D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute

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Silicon N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor TK50J30D-like datasheet