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TPC8017-H Field Effect Transistor

TPC8017-H Description

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Conve.

TPC8017-H Applications

* Portable Equipment Applications
* Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ. ) Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ. ) High forward transfer admittance: |Yf

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Field Effect Transistor Toshiba Semiconductor
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