Datasheet Specifications
- Part number
- TC2696
- Manufacturer
- Transcom
- File Size
- 57.13 KB
- Datasheet
- TC2696_Transcom.pdf
- Description
- 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Description
TRANSCOM TC2696 Preliminary 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs .
Features
* 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High RApplications
* include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 2.45GHz VTC2696 Distributors
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