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AGR09090EF Lateral MOSFET

AGR09090EF Description

AGR09090EF 90 W, 865 MHz *960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally di.

AGR09090EF Features

* Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 40 W):
* Modulation spectrum: @ ±400 kHz =
* 60 dBc. @ ±600 kHz =
* 72 dBc.
* Error vector magnitude (EVM) = 2.3%. www. DataSheet4U. com Typical performance over entire GSM band:
* P1dB: 105 W typical.

AGR09090EF Applications

* This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 90 W, it is ideally suited for today's wireless base station RF power amplifier applicatio

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