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AGR09130E Lateral MOSFET

AGR09130E Description

t Copy Only AGR09130E 130 W, 921 MHz *960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09130E is a high-voltage, laterally diffus.

AGR09130E Features

* Typical performance ratings are for the EDGE format: 3GPP GSM 05.05:
* Output power (POUT): 50 W.
* Power gain: 17.8 dB.
* Modulation spectrum: @ ±400 kHz =
* 60 dBc. @ ±600 kHz =
* 72 dBc.
* Error vector magnitude (EVM) = 1.8%.
* Return loss:

AGR09130E Applications

* This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, and reliability. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 130 W, it is ideally suited for today's RF power amplifier

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