TSA60R190S1 - N-Channel MOSFET

Truesemi

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Datasheet Details

Part number: TSA60R190S1
Manufacturer: Truesemi
File Size: 748.69 KB
Datasheet: TSA60R190S1-Truesemi.pdf
Description: N-Channel MOSFET

TSA60R190S1 Product details

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.16Ω.
Ultra Low gate charge (typ. Qg = 70nC).
100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive.

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