TSA10N80M - N-Channel MOSFET
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
TSA10N80M Features
* 10.0A, 800V, RDS(on) = 1.10Ω @VGS = 10 V
* Low gate charge ( typical 45nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability G DS TO-3P or TO247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol
