TSA18N50M Datasheet (Truesemi)

TSA18N50M, N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSA18N50M Features

* 18.0A,500V,Max.RDS(on)=0.38Ω @ VGS =10V

* Low gate charge(typical 50nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS