TSA20N50M Datasheet (Truesemi) - 500V N-Channel MOSFET

TSA20N50M, 500V N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSA20N50M Features

* 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V Low gate charge ( typical 70nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability { D

* ◀ G { G D S ▲

* {S TO-3P or TO247 Absolute Maximum Ratings