TSA24N50M Datasheet (Truesemi) - 500V N-Channel MOSFET

TSA24N50M, 500V N-Channel MOSFET

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

TSA24N50M Features

* - 24A, 500V, RDS(on) = 0.2Ω@VGS = 10 V - Low gate charge ( typical 90nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Paramete