TSA11N90M Datasheet - Truesemi

TSA11N90M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSA11N90M Features

* 11A,900V,Max.RDS(on)=1.20Ω @ VGS =10V

* Low gate charge(typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS V

TSA11N90M Datasheet (377.16 KB)