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TSA18N50MR - N-Channel MOSFET

Truesemi

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Datasheet Details

Part number: TSA18N50MR
Manufacturer: Truesemi
File Size: 445.72 KB
Datasheet: TSA18N50MR-Truesemi.pdf
Description: N-Channel MOSFET

TSA18N50MR Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

18.0A,500V,Max. RDS(on)=0.31 Ω @ VGS =10V.
Low gate charge(typical 45nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avala.

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N-Channel MOSFET Truesemi

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TSA18N50MR Stock/Price