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TSB840M

N-Channel MOSFET

TSB840M Features

* 9.0A,500V,Max.RDS(on)=0.80 Ω @ VGS =10V

* Low gate charge(typical 30nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D2-PAK ( TO-263 ) Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS

TSB840M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSB840M Datasheet (298.44 KB)

Preview of TSB840M PDF

Datasheet Details

Part number:

TSB840M

Manufacturer:

Truesemi

File Size:

298.44 KB

Description:

N-channel mosfet.

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TAGS

TSB840M N-Channel MOSFET Truesemi

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