TSB840M - N-Channel MOSFET

Name: TSB840M
SKU: TSB840M-1108658

Truesemi

Datasheet Details

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

9.0A,500V,Max. RDS(on)=0.80 Ω @ VGS =10V.
Low gate charge(typical 30nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability D2-PAK ( TO-263 ) Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2).

📁 TSB840M Similar Datasheet

TSB81BA3-EP - IEEE 1394a 3-Port Cable Transceiver/Arbiter (Texas Instruments)
TSB81BA3D - IEEE 1394b THREE-PORT CABLE TRANSCEIVER/ARBITER (Texas Instruments)
TSB81BA3DI - IEEE 1394b THREE-PORT CABLE TRANSCEIVER/ARBITER (Texas Instruments)
TSB81BA3E - IEEE 1394b Three-Port Cable Transceiver/Arbiter (Texas Instruments)
TSB82AA2-EP - 1394b OHCI-Lynx Controller (Texas Instruments)
TSB82AA2B - 1394b OHCI-Lynx Controller (Texas Instruments)
TSB82AF15-EP - PCI Express-Based IEEE 1394b OHCI Host Controller (Texas Instruments)
TSB83AA23 - IEEE Std 1394b-2002 PHY and OHCI Link-Device (Texas Instruments)

Other Datasheets by Truesemi

Published: Apr 13, 2017 |