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TSB8N65M

N-Channel MOSFET

TSB8N65M Features

* 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V

* Low gate charge ( typical 29nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise not

TSB8N65M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSB8N65M Datasheet (256.33 KB)

Preview of TSB8N65M PDF

Datasheet Details

Part number:

TSB8N65M

Manufacturer:

Truesemi

File Size:

256.33 KB

Description:

N-channel mosfet.

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TSB8N65M N-Channel MOSFET Truesemi

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