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TSB8N60M N-Channel MOSFET

TSB8N60M Description

TSB8N60M / TSI8N60M TSB8N60M / TSI8N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

TSB8N60M Features

* - 7.5A, 600V, RDS(on) = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,

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Datasheet Details

Part number
TSB8N60M
Manufacturer
Truesemi
File Size
267.15 KB
Datasheet
TSB8N60M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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