TSD5N60M Datasheet - Truesemi

TSD5N60M - N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

TSD5N60M Features

* - 3.0A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Pa

TSD5N60M-Truesemi.pdf

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Datasheet Details

Part number:

TSD5N60M

Manufacturer:

Truesemi

File Size:

289.66 KB

Description:

N-channel mosfet.

TSD5N60M Distributor

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TSD5N60M N-Channel MOSFET Truesemi