TSD5N65M Datasheet, Mosfet, Truesemi

✔ TSD5N65M Features

- 3.0A, 650V, RDS(on) = 3.0Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS

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TSD5N65M

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Truesemi

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📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially

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TSD5N65M N-Channel MOSFET Truesemi