TSP16N50M Datasheet (Truesemi) - 500V N-Channel MOSFET

TSP16N50M, 500V N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSP16N50M Features

* 16.0A, 500V, RDS(on) = 0.38Ω @VGS = 10 V

* Low gate charge ( typical 45nC)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC = 25°Cunless otherwise no