P2003ED Datasheet - UNIKC

P2003ED P-Channel MOSFET

P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -36 -23 -100 Avalanche Current Avalanche Energy2 IAS -32 L = 0.1 mH EAS 51 Power Dissipation TC = 25 °C PD 42 TC = 100 .

P2003ED-UNIKC.pdf