P2003EVG Datasheet - UNIKC

P2003EVG P-Channel MOSFET

P2003EVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9 -7 -50 Avalanche Current IAS -27 Avalanche Energy L = 0.1mH EAS 36 Power Dissipation TA = 25 .

P2003EVG-UNIKC.pdf