P2003EV Datasheet - UNIKC

P2003EV P-Channel MOSFET

P2003EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9 -7 -45 Avalanche Current IAS -30 Avalanche Energy L = 0.1mH EAS 46 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Op.

P2003EV-UNIKC.pdf