P2003EVT Datasheet - UNIKC

P2003EVT P-Channel MOSFET

P2003EVT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM -9 -8 -32 Avalanche Current IAS -28 Avalanche Energy L = 0.1mH EAS 40 Power Dissipation TC = 25 °C TC = 70 °.

P2003EVT-UNIKC.pdf