P2003ETF Datasheet - UNIKC

P2003ETF P-Channel MOSFET

P2003ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -26A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -26 -16 -120 Avalanche Current IAS -31.4 Avalanche Energy L = 0.1mH EAS 49.5 Power Dissipation TC = 25 °C PD 29 TC =.

P2003ETF-UNIKC.pdf