P5010A - N-Channel MOSFET
P5010AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 34A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID 34 TC = 100 °C 21 IDM 120 Avalanche Current IAS 37 Avalanche Energy L = 0.1mH EAS 70 Power Dissipation TC = 25 °C PD 125 TC = 100 °C 50 Operating Junction & Stora
