P5010AD - N-Channel Transistor
P5010AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 23A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID 23 14 IDM 90 Avalanche Current IAS 38 Avalanche Energy L=0.1mH EAS 73 Power Dissipation TC = 25 °C PD 56 TC = 100 °C 22
