P5010AT Datasheet - UNIKC

P5010AT N-Channel MOSFET

P5010AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 30A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 30 18 IDM 70 Avalanche Current IAS 37 Avalanche Energy L = 0.1mH EAS 70 Power Dissipation TC = 25 °C PD 96 TC = 100 °C 38.

P5010AT Datasheet (327.59 KB)