P5010AV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50mΩ @VGS = 10V 5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 100 °C ID 5 3 IDM 40 Avalanche Current IAS 38 Avalanche Energy L = 0.1mH EAS 73 Power Dissipation TA= 25 °C TA =100 °C PD .