11N90

N-CHANNEL POWER MOSFET

Unisonic Technologies

11N90 Features

* RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A

* High switching speed

* Improved dv/dt capability

* 100% avalanche tested

* SYMBOL Power MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N90L-TA3-T 11N90G-TA3-T TO-220 11N90L-TF1-T 11N90G-TF1-T

11N90 General Description

The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in th.

11N90 Datasheet (222.37 KB)

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Datasheet Details

Part number:

11N90

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Unisonic Technologies

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222.37 KB

Description:

N-channel power mosfet.

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11N90 General Description

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