2N80 Datasheet, Mosfet, Unisonic Technologies

✔ 2N80 Features

RDS(on) ≤ 6.3 Ω @ VGS=10V, ID=1.2A
High switching speed
SYMBOL Power MOSFET
ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80L-TA3-T 2N80G-T

PDF File Details

Unisonic Technologies manufacturer logo

Part number:

2N80

Manufacturer:

Unisonic Technologies

File Size:

627.00kb

Download:

📄 Datasheet

Description:

800v n-channel power mosfet. The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology

📥 Download PDF (627.00kb)

📁 Related Datasheet

2N80 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N80 ·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag.

2N80-C - 800V NHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N80-C 2.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and oper.

2N80K5 - N-channel Power MOSFET (STMicroelectronics)
STL2N80K5 N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet - production data Features 1 2 3 4 P.

2N80Z - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET usi.

2N827 - PNP germanium mesa transistor (Motorola)
2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium mesa transistor for high-speed switching applica.tions. MAXIMUM RATINGS Rating ColleCtor..Sase Volt.

2N828 - PNP germanium epitaxial mesa transistor (Motorola)
2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas. PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM.

2N828A - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI ACTERISTICS Symbol Min Typ Current-Gain ,. Bandwldth Produ.

2N829 - PNP germanium epitaxial mesa transistors (Motorola)
2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI ACTERISTICS Symbol Min Typ Current-Gain ,. Bandwldth Produ.

2N834 - NPN HIGH SPEED SATURATED LOGIC SWITCHES (New Jersey Semi-Conductor)
Free Datasheet http://..net/ .

2N834 - NPN silicon epitaxial transistors (Motorola)
834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collector connected to case MA.

Stock and price

Samsung Semiconductor

LED MOD H INFLUX LNR STRP 3500K

DigiKey

SL-B8U2N80LAWW

102 In Stock

Qty : 1050 units

Unit Price : $8.42

🛒 Buy Now

TAGS

2N80 800V N-CHANNEL POWER MOSFET Unisonic Technologies

Since 2006. D4U Semicon. Datasheet4U.com Contact Us Privacy Policy Purchase of parts