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CHA2595-98F Low Noise Amplifier

CHA2595-98F Description

CHA2595-98F 27.5-43.5GHz Low Noise Amplifier GaAs Monolithic Microwave IC in bare die .
This circuit is a wide band monolithic Low Noise Amplifier with state of the art wide band, low noise and adjustable gain performance.

CHA2595-98F Features

* Broadband performances: 27.5-43.5GHz
* Typical Linear Gain:19.5dB
* Typical Noise Figure: 2dB
* P1dB: 11dBm
* Psat: 12dBm
* OIP3: >20dBm
* DC bias: Vd=3.3V@Id=61mA
* Size : 2350 x 1150 µm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Freque

CHA2595-98F Applications

* from military to commercial communication and test instrumentation systems. It is manufactured with a successfully space evaluated pHEMT process, 100nm gate length, via holes through the substrate, air bridges and electron beam gate lithography. ESD protection on DC/RF is included in the product. M

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Low Noise Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA2595-98F-like datasheet