CHA3511

GaAs Monolithic Microwave

United Monolithic Semiconductors

CHA3511 Features

* Wide Band: 6-18GHz 16dB gain 39dB isolation 22 dBm saturated output power DC power consumption, 190mA @ 4.5V Chip size: 3.55 x 2.30 x 0.1mm Main Characteristics dBS21 (dB) Typical on wafer Measurements Gain versus switch states 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency

CHA3511 General Description

The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. RF IN E2 A B RF.

CHA3511 Datasheet (266.76 KB)

CHA3511 Datasheet Preview — Preview of CHA3511 PDF

Datasheet Details

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CHA3511

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United Monolithic Semiconductors

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Gaas monolithic microwave.

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CHA3511 GaAs Monolithic Microwave United Monolithic Semiconductors

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CHA3511 Features

CHA3511 General Description

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