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CHA3511 GaAs Monolithic Microwave

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Description

6-18GHz Amplifier CHA3511 RoHS COMPLIANT GaAs Monolithic Microwave IC .
The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier.

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Features

* Wide Band: 6-18GHz 16dB gain 39dB isolation 22 dBm saturated output power DC power consumption, 190mA @ 4.5V Chip size: 3.55 x 2.30 x 0.1mm Main Characteristics dBS21 (dB) Typical on wafer Measurements Gain versus switch states 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency

Applications

* The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. RF IN E2 A B RF OUT The circuit is manufactured with a Power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. F DC It is availabl

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