CHA3512-99F Datasheet - United Monolithic Semiconductors

CHA3512-99F Low Noise Digital Variable Amplifier

The CHA3512-99F is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process..

CHA3512-99F Features

* Performances: 6-18GHz

* 23dBm saturated output power

* 16dB gain

* 1 bit attenuator for 20dB dynamic range

* DC power consumption: 210mA @ 4.5V

* Chip size: 4.27 x 2.46 x 0.1mm 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics T

CHA3512-99F-UnitedMonolithicSemiconductors.pdf