CHA3512-99F Low Noise Digital Variable Amplifier

United Monolithic Semiconductors

Description

CHA3512-99F 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC .
The CHA3512-99F is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave.

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Datasheet Specifications

Part number: CHA3512-99F
Manufacturer: United Monolithic Semiconductors
File Size: 510.40 KB
Datasheet: CHA3512-99F-UnitedMonolithicSemiconductors.pdf
Description: Low Noise Digital Variable Amplifier

Features

* Performances: 6-18GHz
* 23dBm saturated output power
* 16dB gain
* 1 bit attenuator for 20dB dynamic range
* DC power consumption: 210mA @ 4.5V
* Chip size: 4.27 x 2.46 x 0.1mm 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics T

Applications

* The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 0dB state Main Fe

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CHA3512-99F Low Noise Digital Variable Amplifier United Monolithic Semiconductors

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