Datasheet4U Logo Datasheet4U.com

CHA3511-99F

Amplifier

CHA3511-99F Features

* Wide Band: 6-18GHz

* 16dB gain

* 39dB isolation

* 22 dBm saturated output power

* DC power consumption, 190mA @ 4.5V

* Chip size: 3.55 x 2.30 x 0.1mm dBS21 (dB) 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz Typical on wafe

CHA3511-99F General Description

E2 RF IN The CHA3511-99F is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly proces.

CHA3511-99F Datasheet (654.14 KB)

Preview of CHA3511-99F PDF

Datasheet Details

Part number:

CHA3511-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

654.14 KB

Description:

Amplifier.

📁 Related Datasheet

CHA3511 GaAs Monolithic Microwave (United Monolithic Semiconductors)

CHA3512 GaAs Monolithic Microwave (United Monolithic Semiconductors)

CHA3512-99F Low Noise Digital Variable Amplifier (United Monolithic Semiconductors)

CHA3513 GaAs Monolithic Microwave (United Monolithic Semiconductors)

CHA3513-99F 3-bit Digital Variable Amplifier (United Monolithic Semiconductors)

CHA3514 GaAs Monolithic Microwave (United Monolithic Semiconductors)

CHA3514-99F 4-bit Digital Variable Amplifier (United Monolithic Semiconductors)

CHA3565-QAG 5-21GHz Driver Amplifier (United Monolithic Semiconductors)

CHA3023 1-18 GHz WIDE BAND AMPLIFIER (United Monolithic Semiconductors)

CHA3023-99F WIDE BAND AMPLIFIER (United Monolithic Semiconductors)

TAGS

CHA3511-99F Amplifier United Monolithic Semiconductors

Image Gallery

CHA3511-99F Datasheet Preview Page 2 CHA3511-99F Datasheet Preview Page 3

CHA3511-99F Distributor