CHA3511-99F Amplifier

United Monolithic Semiconductors

Description

CHA3511-99F 6-18GHz Amplifier GaAs Monolithic Microwave IC .
E2 RF IN The CHA3511-99F is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier.

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Datasheet Specifications

Part number: CHA3511-99F
Manufacturer: United Monolithic Semiconductors
File Size: 654.14 KB
Datasheet: CHA3511-99F-UnitedMonolithicSemiconductors.pdf
Description: Amplifier

Features

* Wide Band: 6-18GHz
* 16dB gain
* 39dB isolation
* 22 dBm saturated output power
* DC power consumption, 190mA @ 4.5V
* Chip size: 3.55 x 2.30 x 0.1mm dBS21 (dB) 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz Typical on wafe

Applications

* The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. F The circuit is manufactured with a Power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. AB RF

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CHA3511-99F Amplifier United Monolithic Semiconductors

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