CHA3513 Datasheet (United Monolithic Semiconductors)

CHA3513, GaAs Monolithic Microwave

The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

This helps to simplify the assembly process.

RF I

CHA3513 Features

* Performances: 6-18GHz

* 20dBm saturated output power

* 19 dB gain

* 3 bit attenuator for 26dB range

* DC power consumption, 300mA @ 4.5V

* Chip size: 6.68 x 2.46 x 0.1mm 0dB state 5dB state 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit