CHA3513 GaAs Monolithic Microwave

United Monolithic Semiconductors

Description

CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC .
The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) sw.

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Datasheet Specifications

Part number: CHA3513
Manufacturer: United Monolithic Semiconductors
File Size: 199.06 KB
Datasheet: CHA3513-UnitedMonolithicSemiconductors.pdf
Description: GaAs Monolithic Microwave

Features

* Performances: 6-18GHz
* 20dBm saturated output power
* 19 dB gain
* 3 bit attenuator for 26dB range
* DC power consumption, 300mA @ 4.5V
* Chip size: 6.68 x 2.46 x 0.1mm 0dB state 5dB state 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit

Applications

* The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. RF IN The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 10A 5A 10A

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CHA3513 GaAs Monolithic Microwave United Monolithic Semiconductors

United Monolithic Semiconductors CHA3513-like datasheet