CHA3512 - GaAs Monolithic Microwave

Name: CHA3512
SKU: CHA3512-972421

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA3512
Manufacturer	United Monolithic Semiconductors
File Size	356.24 KB
Description	GaAs Monolithic Microwave
Datasheet	CHA3512-UnitedMonolithicSemiconductors.pdf

CHA3512 Product details

Description

The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.

Features

Performances: 6-18GHz.
23dBm saturated output power.
16dB gain.
1 bit attenuator for 20dB dynamic range.
DC power consumption: 210mA @ 4.5V.
Chip size: 4.27 x 2.46 x 0.1mm 0dB state 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 16 dB Psat Saturated Output power @ Attenuator state 0.

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Published: Mar 4, 2016 |