CHA3512 Datasheet (United Monolithic Semiconductors)

CHA3512, GaAs Monolithic Microwave

The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

This helps to simplify the assembly process.

The

CHA3512 Features

* Performances: 6-18GHz

* 23dBm saturated output power

* 16dB gain

* 1 bit attenuator for 20dB dynamic range

* DC power consumption: 210mA @ 4.5V

* Chip size: 4.27 x 2.46 x 0.1mm 0dB state 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characte